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Composite Transistors
XP6213
Silicon NPN epitaxial planer transistor
Unit: mm
0.425 1.250.1 0.425
0.20.05
For switching/digital circuits
2.10.1
0.65
q
q
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.00.1
s Features
0.65
1 2 3
6 5 4
0.2
0.90.1
s Basic Part Number of Element
q
0 to 0.1
UN1213 x 2 elements
1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2)
0.70.1
0.20.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25C)
Ratings 50 50 100 150 150 -55 to +150 Unit V V mA mW C C
4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin)
Marking Symbol: 8W Internal Connection
1 2 3 Tr1 6 5 4
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
*1
(Ta=25C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 3.5V, RL = 1k VCB = 10V, IE = -2mA, f = 200MHz -30% 0.8 150 47 1.0 +30% 1.2 4.9 0.2 80 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.1 typ max Unit V V A A mA
Ratio between 2 elements
0.12 -0.02
+0.05
1
Composite Transistors
PT -- Ta
250
XP6213
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (C)
IC -- VCE
160 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 400 Ta=25C
hFE -- IC
VCE=10V
Collector current IC (mA)
120 100 80
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C
Forward current transfer ratio hFE
140
IB=1.0mA
350 300 250 200 150 100 50 0 Ta=75C 25C -25C
60 40 20 0 0 2 4 6 8 10 12 0.2mA
0.1mA
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2

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